Journal papers

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  • 9 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, Volume 20, Number 7, July 2020, pp. 4287-4291(5), 2020-07
  • 8 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors) "Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors" IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
  • 7 J. Park, J. T. Jang, D. Lee, S. A. Chekol, D. H. Kim, and H. Hwang "Dynamic RC delay device with an Insulator-to-Metal Transition Characteristic for Steep-Slope (<5 mV/dec) MOSFET Applications" Scientific Reports, Just accepted, 2020-02
  • 6 S. Choi, H.-S. Mo, J. Kim, S. Kim, S. M. Lee, S.-J. Choi, D. M. Kim, D.-W. Park,* and D. H. Kim*(*co-corresponding authors) "Experimental Extraction of Stern-Layer Capacitance in Biosensor Detection Using Silicon Nanowire Field-Effect Transistors" Current Applied Physics, DOI: 10.1016/j.cap.2020.02.021, 2020-03
  • 5 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors) "A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence" Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04
  • 4 Y. Lee, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H.Kang*, and S.-J. Choi* (*co-corresponding authors) "Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors" AIP Advances, vol. 10, no. 2, p. 025131, DOI: 10.1063/1.5139085, 2020-02
  • 3 Y. Lee†, G.-H. Park†, B. Choi, J. Yoon, H.-J. Kim, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (†These authors equally contributed to this work & *co-corresponding authors) "Design study of the gate-all-around silicon nanosheet MOSFETs" Semiconductor Science and Technology, vol. 35, no. 3, p. 03LT01, DOI: 10.1088/1361-6641/ab6bab, 2020-02
  • 2 J. Lee†, J. T. Jang†, J. Jang, J. Kim, J. W. Chung, S.-J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim "Density-of-States Based Physical Model for Ink-jet Printed Thiophene Polymeric TFTs" IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 283-288, DOI: 10.1109/TED.2019.2953193, 2020-01
  • 1 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., vol. 41, no., 1, pp. 50-53, DOI:10.1109/LED.2019.2954543, 2020-01
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