Journal papers

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  • 18 S. Choi†, S. G. Seo†, H. R. Yu, S. Y. Kim, D. H. Kim*, and S. H. Jin*(†These authors equally contributed to this work & *co-corresponding authors) "Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multi-Layered MoS2 Field Effect Transistors" Physica status solidi (a), Just accepted, 2019-11
  • 17 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., Just accepted, 2019-11
  • 16 S. Kim, Y. Lee, H.-D. Kim, S.-J. Choi* "Precision-extension technique for accurate vector-matrix multiplication with CNT transistor crossbar array" Nanoscale, vol. 11, no. 44, pp. 21449-21457, DOI: 10.1039/C9NR06715A, 2019-11
  • 15 Y. Seo, H.-S. Jeong, H.-Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, X. Jin, H.-I. Kwon*, and D. H. Kim* (*co-corresponding authors) "Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors" Materials, vol. 12, no. 19, p. 3248; doi:10.3390/ma12193248,2019-10, 2019-10
  • 14 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10
  • 13 S. Kim, H.-D. Kim, and S.-J. Choi* "Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network " Scientific Rerpots, vol. 9, p. 15237, DOI:10.1038/s41598-019-51814-5, 2019-10
  • 12 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10
  • 11 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087, 2019-09
  • 10 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09
  • 9 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Subgap Density-of-States from Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" Journal of Nanoscience and Nanotechnoligy (accepted), , 2019-09
  • 8 S. Choi†, S. Kim†, J. Jang, J. Kim, D. M. Kim, S.-J. Choi, H.-S. Mo, S. M. Lee*, and D. H. Kim* (†These authors equally contributed to this work,*co-corresponding authors) "Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance" IEEE Electron Device Lett., vol. 40, no, 10. pp. 1666-1669, DOI: 10.1109/LED.2019.2937157, 2019-10
  • 7 S. Choi, S. Kim, J. Jang, G. Ahn, J. T. Jang, J. Yoon, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, E. Y. Kim, H. S. Mo*, D. H. Kim* (*co-corresponding authors) "Implementing an Artificial Synapse and Neuron Using a Si Nanowire Ion-Sensitive Field-Effect Transistor and Indium-Gallium-Zinc-Oxide Memristors" Sensors and Actuators B:Chemical, vol. 296, no. 126616, pp. 1-9, DOI: 10.1016/j.snb.2019.05.093, 2019-10
  • 6 S. Kim, B. Choi, J. Yoon, Y. Lee, H.-D. Kim, M.-H, Kang, and S.-J. Choi* "Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification" Scientific Reports, vol. 9, p. 11705, DOI:10.1038/s41598-019-48048-w, 2019-08
  • 5 Y. Lee, H. Jung, B. Choi, J. Yoon, H. B. Yoo, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Flexible carbon nanotube Schottky diode and its integrated circuit applications" RSC Advances, vol. 9, no. 38, pp. 22124-22128, DOI:10.1039/c9ra02855b, 2019-07
  • 4 S. Choi, S. Park, J.-Y. Kim, J. Rhee, H. Kang, D. M. Kim, S.-J. Choi, D. H. Kim* "Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure" IEEE Electron Device Letters, vol. 40, no. 9, pp. 1431-1434, DOI : 10.1109/LED.2019.2927378, 2019-09
  • 3 L. Lee, J. W. Hwang, J. W. Jung, J. C. Kim, H. I. Lee, S. W.Heo, M. H. Yoon, S. Choi, N. V. Long, J. S. Park, J. W. Jeong, J. Kim, K. R. Kim, D. H.Kim, S. I. Im, B. H. Lee, K. J. Cho, M. M. Sung* "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors" Nature communications, vol. 10, no. 1998, pp. 1-9, DOI : 10.1038/s41467-019-09998-x , 2019-03
  • 2 S. Choi, J.-Y Kim, J. Rhee, H. Kang, S. Park, D. M. Kim, S.-J Choi, D. H. Kim* "Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses" IEEE Electron Device Letters, vol. 40, no. 4, pp. 574-577, DOI 10.1109/LED.2019.2898217, 2019-04
  • 1 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01
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