Journal papers

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  • 337 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), 2020-07
  • 336 J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters" Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
  • 335 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory" Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04
  • 334 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors) "Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors" IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
  • 333 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors) "A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence" Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04
  • 332 S. Choi, H.-S. Mo, J. Kim, S. Kim, S. M. Lee, S.-J. Choi, D. M. Kim, D.-W. Park,* and D. H. Kim*(*co-corresponding authors) "Experimental Extraction of Stern-Layer Capacitance in Biosensor Detection Using Silicon Nanowire Field-Effect Transistors" Current Applied Physics, vol. 20, no. 6, pp. 828-833, DOI: 10.1016/j.cap.2020.02.021, 2020-03
  • 331 Y. Lee, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H.Kang*, and S.-J. Choi* (*co-corresponding authors) "Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors" AIP Advances, vol. 10, no. 2, p. 025131, DOI: 10.1063/1.5139085, 2020-02
  • 330 Y. Lee†, G.-H. Park†, B. Choi, J. Yoon, H.-J. Kim, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (†These authors equally contributed to this work & *co-corresponding authors) "Design study of the gate-all-around silicon nanosheet MOSFETs" Semiconductor Science and Technology, vol. 35, no. 3, p. 03LT01, DOI: 10.1088/1361-6641/ab6bab, 2020-02
  • 329 J. Lee†, J. T. Jang†, J. Jang, J. Kim, J. W. Chung, S.-J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim "Density-of-States Based Physical Model for Ink-jet Printed Thiophene Polymeric TFTs" IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 283-288, DOI: 10.1109/TED.2019.2953193, 2020-01
  • 328 S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi* "Parallel Weight Update Protocol for a Carbon Nanotube Synaptic Transistor Array for Accelerating Neuromorphic Computing" Nanoscale, vol. 12, no. 3, pp. 2040-2046, DOI: 10.1039/c9nr08979a, 2019-12
  • 327 S. Choi†, S. G. Seo†, H. R. Yu, S. Y. Kim, D. H. Kim*, and S. H. Jin*(†These authors equally contributed to this work & *co-corresponding authors) "Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multi-Layered MoS2 Field Effect Transistors" Physica status solidi (a), 1900492, DOI : 10.1002/pssr.201900492, 2019-12
  • 326 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., vol. 41, no., 1, pp. 50-53, DOI:10.1109/LED.2019.2954543, 2020-01
  • 325 S. Kim, Y. Lee, H.-D. Kim, S.-J. Choi* "Precision-extension technique for accurate vector-matrix multiplication with CNT transistor crossbar array" Nanoscale, vol. 11, no. 44, pp. 21449-21457, DOI: 10.1039/C9NR06715A, 2019-11
  • 324 Y. Seo, H.-S. Jeong, H.-Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, X. Jin, H.-I. Kwon*, and D. H. Kim* (*co-corresponding authors) "Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors" Materials, vol. 12, no. 19, p. 3248; doi:10.3390/ma12193248,2019-10, 2019-10
  • 323 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10
  • 322 S. Kim, H.-D. Kim, and S.-J. Choi* "Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network " Scientific Rerpots, vol. 9, p. 15237, DOI:10.1038/s41598-019-51814-5, 2019-10
  • 321 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10
  • 320 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087, 2019-09
  • 319 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09
  • 318 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Subgap Density-of-States from Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" Journal of Nanoscience and Nanotechnoligy (accepted), , 2019-09