Journal papers

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  • 323 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10
  • 322 S. Kim, H.-D. Kim, and S.-J. Choi* "Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network " Scientific Rerpots, Just Accepted, 2019-10
  • 321 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10
  • 320 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087, 2019-09
  • 319 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09
  • 318 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Subgap Density-of-States from Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" Journal of Nanoscience and Nanotechnoligy (accepted), , 2019-09
  • 317 S. Choi†, S. Kim†, J. Jang, J. Kim, D. M. Kim, S.-J. Choi, H.-S. Mo, S. M. Lee*, and D. H. Kim* (†These authors equally contributed to this work,*co-corresponding authors) "Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance" IEEE Electron Device Lett., vol. 40, no, 10. pp. 1666-1669, DOI: 10.1109/LED.2019.2937157, 2019-10
  • 316 S. Choi, S. Kim, J. Jang, G. Ahn, J. T. Jang, J. Yoon, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, E. Y. Kim, H. S. Mo*, D. H. Kim* (*co-corresponding authors) "Implementing an Artificial Synapse and Neuron Using a Si Nanowire Ion-Sensitive Field-Effect Transistor and Indium-Gallium-Zinc-Oxide Memristors" Sensors and Actuators B:Chemical, vol. 296, no. 126616, pp. 1-9, DOI: 10.1016/j.snb.2019.05.093, 2019-10
  • 315 S. Kim, B. Choi, J. Yoon, Y. Lee, H.-D. Kim, M.-H, Kang, and S.-J. Choi* "Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification" Scientific Reports, vol. 9, p. 11705, DOI:10.1038/s41598-019-48048-w, 2019-08
  • 314 Y. Lee, H. Jung, B. Choi, J. Yoon, H. B. Yoo, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Flexible carbon nanotube Schottky diode and its integrated circuit applications" RSC Advances, vol. 9, no. 38, pp. 22124-22128, DOI:10.1039/c9ra02855b, 2019-07
  • 313 S. Choi, S. Park, J.-Y. Kim, J. Rhee, H. Kang, D. M. Kim, S.-J. Choi, D. H. Kim* "Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure" IEEE Electron Device Letters, vol. 40, no. 9, pp. 1431-1434, DOI : 10.1109/LED.2019.2927378, 2019-09
  • 312 L. Lee, J. W. Hwang, J. W. Jung, J. C. Kim, H. I. Lee, S. W.Heo, M. H. Yoon, S. Choi, N. V. Long, J. S. Park, J. W. Jeong, J. Kim, K. R. Kim, D. H.Kim, S. I. Im, B. H. Lee, K. J. Cho, M. M. Sung* "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors" Nature communications, vol. 10, no. 1998, pp. 1-9, DOI : 10.1038/s41467-019-09998-x , 2019-03
  • 311 S. Choi, J.-Y Kim, J. Rhee, H. Kang, S. Park, D. M. Kim, S.-J Choi, D. H. Kim* "Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses" IEEE Electron Device Letters, vol. 40, no. 4, pp. 574-577, DOI 10.1109/LED.2019.2898217, 2019-04
  • 310 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01
  • 309 B. Choi, J. Lee, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, S. Chung, C. Lim, S.-J. Choi* "Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3-D charge trap flash memory" Semiconductor Science and Technology, vol. 33, no. 10, doi.org/10.1088/1361-6641/aade29, 2018-09
  • 308 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, DOI: 1109/TED.2018.2844862, 2018-08
  • 307 S. Kim†, B. Choi†, M. Lim, Y. Kim, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification" Small, DOI: 10.1002/small. 201800521, 2018-07
  • 306 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06
  • 305 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, DOI: 10.1021/acsnano.8b02244, 2018-05
  • 304 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, DOI: 10.1016/j.jallcom.2018.05.188, 2018-05