15H. Jung, S. choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim*"Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors"Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10
14J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim*"The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress"Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10
13Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi*"Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces"Applied physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10
12S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim"Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques"IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09
11J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work)"Transparent, flexible strain sensor based on a solution-processed carbon nanotube network"ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07
10J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors)"Determination of individual contact interfaces in carbon nanotube network-based transistors"Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07
9M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors)"Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor"Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07
8H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work)"Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors"IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05
7S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim"Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors"IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05
6J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park"Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors"Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
5S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park"Sampling time and pH-dependences of SiNW ISFET-based biosensors"Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
4D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang"Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti"Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
3H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim"Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques"IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
2H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim"Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs through Fully Electrical Techniques"IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
1S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim"Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density"Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01