Prof. Kim`s R.P.

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  • 180 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., Just accepted, 2019-11
  • 179 Y. Seo, H.-S. Jeong, H.-Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, X. Jin, H.-I. Kwon*, and D. H. Kim* (*co-corresponding authors) "Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors" Materials , vol. 12, no. 19, p. 3248; https://doi.org/10.3390/ma12193248,2019-10, 2019-10 PDF
  • 178 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10 PDF
  • 177 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087., 2019-09 PDF
  • 176 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10 PDF
  • 175 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Subgap Density-of-States from Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" Journal of Nanoscience and Nanotechnoligy (accepted), , 2019-09
  • 174 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09 PDF
  • 173 S. Choi†, S. Kim†, J. Jang, J. Kim, D. M. Kim, S.-J. Choi, H.-S. Mo, S. M. Lee*, and D. H. Kim* (†These authors equally contributed to this work,*co-corresponding authors) "Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance" IEEE Electron Device Lett. , vol. 40, no, 10. pp. 1666-1669, DOI: 10.1109/LED.2019.2937157, 2019-10 PDF
  • 172 Y. Lee, H. Jung, B. Choi, J. Yoon, H. B. Yoo, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Flexible carbon nanotube Schottky diode and its integrated circuit applications" RSC Advances, vol. 9, no. 38, pp. 22124-22128, DOI:10.1039/c9ra02855b, 2019-07 PDF
  • 171 S. Choi, S. Kim, J. Jang, G. Ahn, J. T. Jang, J. Yoon, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, E. Y. Kim, H. S. Mo*, D. H. Kim* (*co-corresponding authors) "Implementing an Artificial Synapse and Neuron Using a Si Nanowire Ion-Sensitive Field-Effect Transistor and Indium-Gallium-Zinc-Oxide Memristors" Sensors and Actuators B:Chemical, vol. 296, no. 126616, pp. 1-9, DOI: 10.1016/j.snb.2019.05.093, 2019-10 PDF
  • 170 S. Choi, S. Park, J.-Y. Kim, J. Rhee, H. Kang, D. M. Kim, S.-J. Choi, D. H. Kim* "Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure" IEEE Electron Device Letters, vol. 40, no. 9, pp. 1431-1434, DOI : 10.1109/LED.2019.2927378, 2019-09 PDF
  • 169 S. Choi, J.-Y Kim, J. Rhee, H. Kang, S. Park, D. M. Kim, S.-J Choi, D. H. Kim* "Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses" IEEE Electron Device Letters, vol. 40, no. 4, pp. 574-577, DOI 10.1109/LED.2019.2898217, 2019-02 PDF
  • 168 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01 PDF
  • 167 B. Choi, J. Lee, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, S. Chung, C. Lim, S.-J. Choi* "Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3-D charge trap flash memory" Semiconductor Science and Technology, vol. 33, no. 10, doi.org/10.1088/1361-6641/aade29, 2018-09 PDF
  • 166 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, 10.DOI: 1109/TED.2018.2844862, 2018-08 PDF
  • 165 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, Vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06 PDF
  • 164 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, DOI: 10.1021/acsnano.8b02244, 2018-05 PDF
  • 163 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, DOI: 10.1016/j.jallcom.2018.05.188, 2018-05 PDF
  • 162 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04 PDF
  • 161 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04 PDF